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| NPN T-1 Standard Phototransistor LTR-4206/LTR-4206E Features Wide range of collector currents. Lens for high sensitivity. Low cost plastic package. Package Dimensions Description The LTR-4206 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10 measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-4206 series of infrared emitting diodes. The LTR-4206E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Absolute Maximum Ratings at Ta=25 Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] Maximum Rating 100 30 5 -40 -55 260 to +85 to +100 for 5 Seconds Unit mW V V Electrical Optical Characteristics at Ta=25 Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Symbol V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf ICEO IC(ON) Part No. Min. 30 5 Typ. Max. Unit V V Test Condition IC=1mA Ee=0mW/cm2 IE=100 A Ee=0mW/cm2 IC=100 A Ee=1mW/cm2 VCC=5V IC=1mA RL=1K VCE=10V Ee=0mW/cm2 VCE=5V Ee=1mW/cm2 =940nm 0.4 10 15 100 LTR-4206 LTR-4206E 1 1 4 2 V S S nA mA 10-31 INFRARED PRODUCTS Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted) 10-32 |
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